BFR180W Datasheet, PDF (2/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA)

BFR 180W
Electrical Characteristics at T_A = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I_C = 1 mA, I_B = 0
Collector-emitter cutoff current
V_CE = 10 V, V_BE = 0
Collector-base cutoff current
V_CB = 8 V, I_E = 0
Emitter-base cutoff current
V_EB = 1 V, I_C = 0
DC current gain
I_C = 1 mA, V_CE = 5 V
V_(BR)CEO
8
I_CES
-
I_CBO
-
I_EBO
-
h_FE
30
V
-
-
µA
-
100
nA
-
100
µA
-
1
-
100
200
Semiconductor Group
2
Dec-11-1996