BFR180W Datasheet, PDF (1/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA)

NPN Silicon RF Transistor
• For low-power amplifiers in mobile
communication systems (pager) at collector
currents from 0.2mA to 2.5mA
• f_T = 7GHz
F = 2.1dB at 900MHz
BFR 180W
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFR 180W RDs
Q62702-F1490
1=B
2=E
3=C
Package
SOT-323
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T_S ≤ 126 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point ¹⁾
Symbol
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
R_thJS
1) T_S is measured on the collector lead at the soldering point to the pcb.
Values
8
10
10
2
4
0.5
30
150
- 65 ... + 150
- 65 ... + 150
≤ 790
Unit
V
mA
mW
°C
K/W
Semiconductor Group
1
Dec-11-1996