BC876 Datasheet, PDF (4/4 Pages) Siemens Semiconductor Group – PNP Silicon Darlington Transistors (High current gain High collector current)

DC current gain hFE = f (IC)
VCE = 10 V, TA = 25 ˚C
BC 876
… BC 880
Transition frequency fT = f (IC)
VCE = 5 V, f = 20 MHz
Collector-emitter saturation voltage
VCEsat = f (IC)
Parameter = IB, TA = 25 ˚C
Base-emitter saturation voltage
VBEsat = f (IC)
Parameter = IB, TA = 25 ˚C
Semiconductor Group
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