BC876 Datasheet, PDF (2/4 Pages) Siemens Semiconductor Group – PNP Silicon Darlington Transistors (High current gain High collector current)

BC 876
… BC 880
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics
Collector-emitter breakdown voltage
IC = 50 mA
BC 876
BC 878
BC 880
Collector-base breakdown voltage
IC = 100 µA
BC 876
BC 878
BC 880
Emitter-base breakdown voltage, IE = 100 µA
Collector cutoff current
VCE = 0.5 × VCEmax
Collector cutoff current
VCB = VCBmax
VCB = VCBmax, TA = 150 ˚C
Emitter cutoff current, VEB = 4 V
DC current gain
IC = 150 mA; VCE = 10 V¹⁾
IC = 500 mA; VCE = 10 V¹⁾
Collector-emitter saturation voltage¹⁾
IC = 500 mA, IB = 0.5 mA
IC = 1000 mA, IB = 1 mA
Base-emitter saturation voltage¹⁾
IC = 1000 mA; IB = 1 mA
AC characteristics
Transition frequency
IC = 200 mA, VCE = 5 V, f = 20 MHz
Symbol
Values
Unit
min. typ. max.
V(BR)CE0
45 –
60 –
80 –
V(BR)CB0
60 –
80 –
100 –
V(BR)EB0
5
–
ICE0
–
–
ICB0
IEB0
hFE
VCEsat
VBEsat
–
–
–
–
–
–
1000 –
2000 –
–
–
–
–
–
–
V
–
–
–
–
–
–
–
500
100 nA
20
µA
100 nA
–
–
–
V
1.3
1.8
2.2
fT
–
150 –
MHz
1) _{Pulse test: t ≤ 300 µs, D ≤ 2 %.}
Semiconductor Group
2