|
BC876 Datasheet, PDF (3/4 Pages) Siemens Semiconductor Group – PNP Silicon Darlington Transistors (High current gain High collector current) | |||
|
◁ |
BC 876
⦠BC 880
Total power dissipation Ptot = f (TA; TC)
Collector cutoff current ICB0 = f (TA)
VCB = 100 V
Permissible pulse load RthJA = f (tp)
DC current gain hFE = f (TA)
VCE = 10 V
Semiconductor Group
3
|
▷ |