BC876 Datasheet, PDF (1/4 Pages) Siemens Semiconductor Group – PNP Silicon Darlington Transistors (High current gain High collector current)

PNP Silicon Darlington Transistors
q High current gain
q High collector current
q Low collector-emitter saturation voltage
q Complementary types: BC 875, BC 877,
BC 879 (NPN)
BC 876
… BC 880
Type
BC 876
BC 878
BC 880
Marking
–
Ordering Code
C62702-C943
C62702-C942
C62702-C941
Pin Configuration
1
2
3
E
C
B
Package¹⁾
TO-92
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TC = 90 ˚C²⁾
Junction temperature
Storage temperature range
Symbol Values
BC 876
VCE0
45
VCB0
60
VEB0
IC
ICM
IB
IBM
Ptot
Tj
Tstg
BC 878 BC 880
60
80
80
100
5
1
2
100
200
0.8 (1)
150
– 65 … + 150
Unit
V
A
mA
W
˚C
Thermal Resistance
Junction - ambient²⁾
Rth JA
≤ 156
K/W
Junction - case³⁾
Rth JC
≤ 75
1) _{For detailed information see chapter Package Outlines.}
2) _{If transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm × 10 mm large copper area for}
the collector terminal, RthJA = 125 K/W and thus Ptot max = 1 W at TA = 25 ˚C.
3) _{Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.}
Semiconductor Group
1
5.91