HYB3164800J Datasheet, PDF (24/28 Pages) Siemens Semiconductor Group – 8M x 8-Bit Dynamic RAM

HYB 3164(5)800J/T-50/-60
8M x 8-DRAM
V _IH
RAS
V _IL
V _IH
CAS
V _IL
V _IH
Address
V _IL
Read Cycle
WRITE
V _IH
V _IL
OE
V _IH
V _IL
I/O1-I/O8
V _IH
(Inputs)
V _IL
I/O1-I/O8
VOH
(Outputs)
VOL
Write Cycle
V _IH
WRITE
V _IL
OE
V _IH
V _IL
I/O1-I/O8
V _IH
(Inputs)
V _IL
I/O1-I/O8
V
(Outputs)
IH
V _IL
Read-Modify-Write Cycle
V _IH
WRITE
V _IL
V _IH
OE
V _IL
I/O1-I/O8
V _IH
(Inputs)
V _IL
I/O1-I/O8
VOH
(Outputs)
VOL
t_CSR
t_CHR
t_WRP
t_WRH
t_WRP
t_WRH
t_RAS
t_CPT
t_RSH
t_CAS
t_ASC
t_CAH
t_RAL
Column
Address
t_RCS
t_{AA tCAC}
t_RP
t_ASR
Row
Address
t_RRH
t_RCH
t_OEA
t_DZC
t_DZO
t_CDD
t_ODD
t_OFF
t_CLZ
t_OEZ
t_WCS
Valid Data Out
t_RWL
t_CWL
t_WCH
t_WRP
t_WRH
t_DS
t_DH
Valit Data In
HI-Z
t_RCS
t_AWD
t_CWD
tCAC
t_AA
t_OEA
t_CWL
t_RWL
t_WP
t_OEH
t_DZC
t_DZO
t_DS
t_DH
Data In
t_CLZ
t_CAC
t_ODD
t_OEZ
HI-Z
D.Out
HI-Z
CAS-Before-RAS Refresh Counter Test Cycle
Semiconductor Group
144