HYB3164800J Datasheet, PDF (1/28 Pages) Siemens Semiconductor Group – 8M x 8-Bit Dynamic RAM

8M x 8-Bit Dynamic RAM
(4k & 8k Refresh)
HYB 3164800J/T -50/-60
HYB 3165800J/T -50/-60
Preliminary Information
• 8 388 608 words by 8-bit organization
• 0 to 70 ˚C operating temperature
• Fast access and cycle time
RAS access time:
50 ns (-50 version)
60 ns (-60 version)
Cycle time:
90 ns (-50 version)
110 ns (-60 version)
CAS access time:
13 ns ( -50 version)
15 ns ( -60 version)
• Fast page mode cycle time
35 ns (-50 version)
40 ns (-60 version)
• Single + 3.3 V (± 0.3V) power supply
• Low power dissipation
max. 396 active mW ( HYB 3164800J/T-50)
max. 360 active mW ( HYB 3164800J/T-60)
max. 504 active mW ( HYB 3165800J/T-50)
max. 432 active mW ( HYB 3165800J/T-60)
7.2 mW standby (TTL)
720 W standby (MOS)
• Read, write, read-modify-write, CAS-before-RAS refresh (CBR),
RAS-only refresh, hidden refresh and self refresh modes
• Fast page mode capability
• 8192 refresh cycles/128 ms , 13 R/ 10C addresses (HYB 3164800J/T)
• 4096 refresh cycles/ 64 ms , 12 R/ 11C addresses (HYB 3165800J/T)
• Plastic Package:
P-SOJ-34-1 500 mil HYB 3164(5)800J
P-TSOPII-34-1 500 mil HYB 3164(5)800T
Semiconductor Group
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