HYB3164800J Datasheet, PDF (11/28 Pages) Siemens Semiconductor Group – 8M x 8-Bit Dynamic RAM

HYB 3164(5)800J/T-50/-60
8M x 8-DRAM
AC Characteristics (cont’d)(note: 6,7,8)
T_A = 0 to 70 ˚C,V_CC = 3.3 ± 0.3V
Parameter
Symbol
HYB
3164(5)800
J/T-50
min. max.
CAS precharge to RAS Delay
t_RHCP
30
–
HYB
3164(5)800
J/T-60
min. max.
35
–
Unit Note
ns
Fast Page Mode Read-Modify-Write
Cycle
Fast page mode read-write cycle time t_PRWC
71
–
80
–
ns
CAS precharge to WE
t_CPWD
48
–
55
–
ns
CAS-before-RAS refresh cycle
CAS setup time
t_CSR
5
–
5
–
ns
CAS hold time
t_CHR
10
–
10
–
ns
RAS to CAS precharge time
t_RPC
5
–
5
–
ns
Write to RAS precharge time
t_WRP
10
–
10
–
ns
Write hold time referenced to RAS
t_WRH
10
–
10
–
ns
CAS-before-RAS counter test cycle
CAS precharge time
t_CPT
25
–
30
–
ns
Test mode cycle
Write command setup time
Write command hold time
t_WTS
10
–
10
–
ns
t_WTH
10
–
10
–
ns
Self Refresh Cycle
RAS pulse width
RAS precharge time
CAS hold time
t_RASS
t_RPS
t_CHS
100k –
90
–
-50 –
100k –
110 –
-50 –
ns 17
17
ns 17
Semiconductor Group
131