HYB3164800J Datasheet, PDF (2/28 Pages) Siemens Semiconductor Group – 8M x 8-Bit Dynamic RAM

HYB 3164(5)800J/T-50/-60
8M x 8-DRAM
This device is a 64 MBit dynamic RAM organized 8 388 608 by 8 bits. The device is fabricated in
SIEMENS/IBM’s most advanced first generation 64Mbit CMOS silicon gate process technology.
The circuit and process design allow this device to achieve high performance and low power
dissipation. This DRAM operates with a single 3.3 +/-0.3V power supply and interfaces with either
LVTTL or LVCMOS levels. Multiplexed address inputs permit the HYB 3164(5)800J/T to be
packaged in a 500 mil wide SOJ-34 or TSOP-34 plastic package. These packages provide high
system bit densities and are compatible with commonly used automatic testing and insertion
equipment.
Ordering Information
Type
HYB 3164800J-50
HYB 3164800J-60
HYB 3164800T-50
HYB 3164800T-60
HYB 3165800J-50
HYB 3165800J-60
HYB 3165800T-50
HYB 3165800T-60
Ordering
Code
on request
on request
on request
on request
on request
on request
on request
on request
Package
Descriptions
P-SOJ-34-1
P-SOJ-34-1
P-TSOPII-34-1
P-TSOPII-34-1
P-SOJ-34-1
P-SOJ-34-1
P-TSOPII-34-1
P-TSOPII-34-1
500 mil DRAM (access time 50 ns)
500 mil DRAM (access time 60 ns)
500 mil DRAM (access time 50 ns)
500 mil DRAM (access time 60 ns)
500 mil DRAM (access time 50 ns)
500 mil DRAM (access time 60 ns)
500 mil DRAM (access time 50 ns)
500 mil DRAM (access time 60 ns)
Pin Names
A0-A12
A0-A11
RAS
OE
I/O1-I/O8
CAS
WRITE
Vcc
Vss
Address Inputs for HYB 3164800J/T
Address Inputs for HYB 3165800J/T
Row Address Strobe
Output Enable
Data Input/Output
Column Address Strobe
Read/Write Input
Power Supply ( + 3.3V)
Ground
Semiconductor Group
122