HYM64V2005GU-50 Datasheet, PDF (11/14 Pages) Siemens Semiconductor Group – 3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module

HYM 64(72)V2005GU-50/-60
2M x 64/72 DRAM Module
AC Characteristics (contd’ ) ⁵⁾⁶⁾
T_A = 0 to 70 °C,V_CC = 3.3 V ± 0.3 V, t_T = 2 ns
Parameter
Symbol
Limit Values
Unit
-50
-60
min. max. min. max.
Hyper Page Mode (EDO) Read-modify-Write Cycle
Hyper page mode (EDO) read-write
t_PRWC
58
–
68
–
ns
cycle time
CAS precharge to WE
t_CPWD 41
–
49
–
ns
16E
Note
CAS-before-RAS Refresh Cycle
CAS setup time
t_CSR
10
–
10
–
ns
CAS hold time
t_CHR
10
–
10
–
ns
RAS to CAS precharge time
t_RPC
5
–
5
–
ns
Write to RAS precharge time
t_WRP
10
–
10
–
ns
Write hold time referenced to RAS
t_WRH
10
–
10
–
ns
Capacitance
T_A = 0 to 70 °C; V_CC = 3.3 V ± 0.3 V; f = 1 MHz
Parameter
Input Capacitance (A0 to A9)
Input Capacitance (RAS0, RAS2)
Input Capacitance (CAS0-CAS7)
Input Capacitance (WE0,WE2,OE0,OE2)
I/O Capacitance (DQ0-DQ63,CB0-CB8)
Input Capacitance (SCL, SA0-2)
Input/Output Capacitance (SDA)
Symbol
C_I1
C_I2
C_I3
C_I4
C_IO1
C_s
Cs
Limit Values
min.
max.
–
55
–
50
–
10
–
50
–
11
–
8
–
10
Unit
pF
pF
pF
pF
pF
pF
pF
Semiconductor Group
11