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HYS64V4120GU Datasheet, PDF (1/11 Pages) Siemens Semiconductor Group – 3.3V 4M x 64-Bit 2 BANK SDRAM Module 3.3V 4M x 72-Bit 2 BANK SDRAM Module | |||
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3.3V 4M x 64-Bit 2 BANK SDRAM Module
3.3V 4M x 72-Bit 2 BANK SDRAM Module
168 pin unbuffered DIMM Modules
HYS64V4120GU-10
HYS72V4120GU-10
⢠168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM Module
for PC main memory applications
⢠2 bank 4M x 64, 4M x 72 organisation
⢠Optimized for byte-write non-parity or ECC applications
⢠Fully PC66 layout compatible
⢠JEDEC standard Synchronous DRAMs (SDRAM)
⢠Performance:
fCK
Max. Clock frequency
tAC
Max. access time from clock
-10
66 MHz @ CL=2
100 MHz @ CL=3
9 ns @ CL=2
8 ns @ CL=3
⢠Single +3.3V(± 0.3V ) power supply
⢠Programmable CAS Latency, Burst Length and Wrap Sequence
(Sequential & Interleave)
⢠Auto Refresh (CBR) and Self Refresh
⢠Decoupling capacitors mounted on substrate
⢠All inputs, outputs are LVTTL compatible
⢠Serial Presence Detect with E2PROM
⢠Utilizes 16 / 18 2M x 8 SDRAMs in TSOPII-44 packages
⢠4096 refresh cycles every 64 ms
⢠Gold contact pad
⢠Card Size: 133,35 mm x 29.21 mm x 4,00 mm for HYS64(72)V4120GU
Semiconductor Group
1
2.98
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