IRFR540Z Datasheet, PDF (5/9 Pages) International Rectifier – HEXFET® Power MOSFET

IRFR/U540Z
40
2.5
ID = 21A
VGS = 10V
30
2.0
20
1.5
10
1.0
0
25
50
75
100 125 150 175
TC , CaseTemperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
vs. Temperature
10
1 _{D = 0.50}
0.20
0.10
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
τ_{J τJ}
τ_{1 τ1}
R_1R1
Ci= τi/Ri
Ci τi/Ri
R_2R2
τ_{2 τ2}
R_{3R3 Ri (°C/W) τi (sec)}
τ_{Cτ 2.626 0.000052}
τ_{3 τ3}
0.6611 0.001297
0.7154 0.01832
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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