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| IRFR540Z Datasheet, PDF (2/9 Pages) International Rectifier – HEXFET® Power MOSFET | |||
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IRFR/U540Z
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
gfs
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
100 âââ âââ
âââ 0.092 âââ
âââ 22.5 28.5
2.0 âââ 4.0
28 âââ âââ
âââ âââ 20
âââ âââ 250
âââ âââ 200
âââ âââ -200
âââ 39 59
âââ 11 âââ
âââ 12 âââ
âââ 14 âââ
âââ 42 âââ
âââ 43 âââ
âââ 34 âââ
âââ 4.5 âââ
âââ 7.5 âââ
âââ 1690 âââ
âââ 180 âââ
âââ 100 âââ
âââ 720 âââ
âââ 110 âââ
âââ 190 âââ
V VGS = 0V, ID = 250µA
e V/°C Reference to 25°C, ID = 1mA
m⦠VGS = 10V, ID = 21A
V VDS = VGS, ID = 50µA
S VDS = 25V, ID = 21A
µA VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
ID = 21A
e nC VDS = 50V
VGS = 10V
VDD = 50V
ID = 21A
e ns RG = 13 â¦
VGS = 10V
Between lead,
D
nH 6mm (0.25in.)
from package
G
and center of die contact
S
VGS = 0V
VDS = 25V
pF Æ = 1.0MHz
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
f VGS = 0V, VDS = 80V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 80V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
âââ âââ 35
MOSFET symbol
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
âââ âââ 140
A showing the
integral reverse
âââ âââ 1.3
âââ 32 48
âââ 40 60
e p-n junction diode.
V TJ = 25°C, IS = 21A, VGS = 0V
e ns TJ = 25°C, IF = 21A, VDD = 50V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2 / 11
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