IRFR540Z Datasheet, PDF (4/9 Pages) International Rectifier – HEXFET® Power MOSFET

IRFR/U540Z
3000
2500
2000
1500
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
500
0
1
Coss
Crss
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
20
ID= 21A
16
12
VDS= 80V
VDS= 50V
VDS= 20V
8
4
0
0 10 20 30 40 50 60
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000.0
100.0
TJ = 175°C
10.0
1.0
TJ = 25°C
0.1
0.2
VGS = 0V
0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100µsec
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0
1
10msec
DC
10
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
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