IRFR540Z Datasheet, PDF (3/9 Pages) International Rectifier – HEXFET® Power MOSFET

IRFR/U540Z
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
≤60µs PULSE WIDTH
Tj = 25°C
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10
1
0.1
4.5V
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
4.5V
1
0.1
≤60µs PULSE WIDTH
Tj = 175°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
100
TJ = 175°C
10
1
TJ = 25°C
VDS = 25V
≤60µs PULSE WIDTH
0.1
2
3
4
5
6
7
8
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
70
TJ = 25°C
60
50
40
TJ = 175°C
30
20
10
0
0
VDS = 10V
380µs PULSE WIDTH
10
20
30
40
50
ID,Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
vs. Drain Current
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