SUD19N20-90 Datasheet, PDF (4/7 Pages) Vishay Siliconix – N-Channel 200-V (D-S) 175C MOSFET

SUD19N20-90
N-Channel
200 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
3.0
100
V_GS = 10 V
2.5
I_D = 5 A
2.0
T_J = 150 °C
1.5
10
1.0
T_J = 25 °C
0.5
0.0
- 50 - 25 0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
THERMAL RATINGS
25
1
0
0.3
0.6
0.9
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
100
20
Limited by R_DS(on)*
10 µs
100 µs
10
15
1 ms
10
1
10 ms
5
T_C = 25 °C
Single Pulse
100 ms
1 s, DC
0
0
25 50 75 100 125 150 175
T_C - Case Temperature (°C)
Maximum Avalanche Drain Current
vs. Case Temperature
2
1
Duty Cycle = 0.5
0.1
0.1
1
10
100
1000
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- ⁴
10- ³
10- ²
10- ¹
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10
30
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