SUD19N20-90 Datasheet, PDF (1/7 Pages) Vishay Siliconix – N-Channel 200-V (D-S) 175C MOSFET

SUD19N20-90
N-Channel
200 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
200
R_DS(on) ()
0.090 at V_GS = 10 V
0.105 at V_GS = 6 V
I_D (A)
19
17.5
TO-252
FEATURES
• TrenchFET^® Power MOSFET
• 175 °C Junction Temperature
• PWM Optimized
• 100 % R_g Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Primary Side Switch
D
Drain Connected to Tab
GD S
Top View
Ordering Information:
SUD19N20-90-E3 (Lead (Pb)-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current (T_J = 175 °C)^b
T_C = 25 °C
T_C = 125 °C
I_D
Pulsed Drain Current
I_DM
Continuous Source Current (Diode Conduction)
I_S
Avalanche Current
I_AS
Single Pulse Avalanche Energy
L = 0.1 mH
E_AS
Maximum Power Dissipation
T_C = 25 °C
T_A = 25 °C
P_D
Operating Junction and Storage Temperature Range
T_J, T_stg
Limit
200
± 20
19
11
40
19
19
18
136^b
3^a
- 55 to 175
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient^a
Junction-to-Case (Drain)
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See SOA curve for voltage derating.
t  10 s
Steady State
Symbol
R_thJA
R_thJC
Typical
15
40
0.85
Maximum
18
50
1.1
Unit
V
A
mJ
W
°C
Unit
°C/W
1/7
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