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SUD19N20-90 Datasheet, PDF (2/7 Pages) Vishay Siliconix – N-Channel 200-V (D-S) 175C MOSFET
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SUD19N20-90
N-Channel
200 V (D-S) 175 °C MOSFET
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 200 V, VGS = 0 V
VDS = 200 V, VGS = 0 V, TJ = 125 °C
VDS = 200 V, VGS = 0 V, TJ = 175 °C
VDS =5 V, VGS = 10 V
VGS = 10 V, ID = 5 A
VGS = 10 V, ID = 5 A, TJ = 125 °C
VGS = 10 V, ID = 5 A, TJ = 175 °C
VGS = 6 V, ID = 5 A
VDS = 15 V, ID = 19 A
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V, VDS = 25 V, F = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
VDS = 100 V, VGS = 10 V, ID = 19 A
Gate-Drain Chargec
Qgd
Gate Resistance
Rg
Turn-On Delay Timec
td(on)
Rise Timec
Turn-Off Delay Timec
tr
td(off)
VDD = 100 V, RL = 5.2 
ID  19 A, VGEN = 10 V, Rg = 2.5 
Fall Timec
tf
Source-Drain Diode Ratings and Characteristics (TC = 25 °C)
Pulsed Current
ISM
Diode Forward Voltageb
VSD
IF = 19 A, VGS = 0 V
Source-Drain Reverse Recovery Time
trr
IF = 19 A, dI/dt = 100 A/µs
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width  300 µs, duty cycle  2 %.
c. Independent of operating temperature.
Min.
200
2
40
0.5
Typ.a
Max.
4
± 100
1
50
250
0.075
0.082
35
0.090
0.190
0.260
0.105
1800
180
80
34
51
8
12
2.9
15
25
50
75
30
45
60
90
50
0.9
1.5
180
250
Unit
V
nA
µA
A

S
pF
nC

ns
A
V
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2/7
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