SUD19N20-90 Datasheet, PDF (3/7 Pages) Vishay Siliconix – N-Channel 200-V (D-S) 175C MOSFET

SUD19N20-90
N-Channel
200 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
40 _{VGS = 10 V thru 7 V}
6V
40
30
30
20
10
5V
0
0
70
60
50
40
30
20
10
0
0
2500
4V
2
4
6
8
10
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
T_C = - 55 °C
25 °C
125 °C
10
20
30
40
I_D - Drain Current (A)
Transconductance
2000
C_iss
1500
1000
500
C_rss
C_oss
0
0
40
80
120
160
200
V_DS - Drain-to-Source Voltage (V)
Capacitance
3/7
20
10
0
0
0.20
T_C = 125 °C
25 °C
- 55 °C
1
2
3
4
5
6
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.15
0.10
V_GS = 6 V
0.05
V_GS = 10 V
0.00
0
20
10
20
30
40
I_D - Drain Current (A)
On-Resistance vs. Drain Current
16
V_DS = 100 V
I_D = 19 A
12
8
4
0
0
10
20
30
40
50
60
Q_g - Total Gate Charge (nC)
Gate Charge
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