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GP1S196HCZ0F Datasheet, PDF (8/11 Pages) Sharp Electrionic Components – Gap : 1.1mm, Slit : 0.3mm Phototransistor Output, Compact Transmissive Photointerrupter | |||
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GP1S196HCZ0F/GP1S196HCZSF
â Manufacturing Guidelines
â Storage and management after open (Only for GP1S196HCZSF)
Storage condition
Storage temp.: 5 to 30ËC, Storage humidity : 70%RH or less at regular packaging.
Treatment after opening the moisture-proof package
After opening, you should mount the products while keeping them on the condition of 5 to 25ËC and 70%RH
or less in humidity within 4 days.
After opening the bag once even if the prolonged storage is necessary, you should mount the products within
two weeks.
And when you store the rest of products you should put into a DRY BOX. Otherwise after the rest of products
and silicagel are sealed up again, you should keep them under the condition of 5 to 30ËC and 70%RH or
less in humidity.
Baking before mounting
When the above-mentioned storage method could not be executed, please process the baking treatment
before mounting the products.
However the baking treatment is permitted within one time.
Recommended condition : 125ËC, 16 to 24 hours
âDo not process the baking treatment with the product wrapped. When the baking treatment processing, you
should move the products to a metallic tray or ï¬x temporarily the products to substrate.
â Soldering Method
Reï¬ow Soldering (Only for GP1S196HCZSF) :
Reï¬ow soldering should follow the temperature proï¬le shown below.
Soldering should not exceed the curve of temperature proï¬le and time.
Please solder within one time.
MAX
240ËC
200ËC
1 to 4ËC/s
MAX
160ËC
25ËC
1 to 4ËC/s
MAX120s
8
1 to 4ËC/s
MAX10s
MAX60s
MAX90s
Sheet No.: D3-A01001EN
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