GP1S196HCZ0F Datasheet, PDF (7/11 Pages) Sharp Electrionic Components – Gap : 1.1mm, Slit : 0.3mm Phototransistor Output, Compact Transmissive Photointerrupter

● Parts
This product is assembled using the below parts.
• Photodetector (qty. : 1)
Category
Material
Phototransistor
Silicon (Si)
Maximum Sensitivity
wavelength (nm)
930
GP1S196HCZ0F/GP1S196HCZSF
Sensitivity
wavelength (nm)
700 to 1 200
Response time (μs)
20
• Photo emitter (qty. : 1)
Category
Infrared emitting diode
(non-coherent)
Material
Gallium arsenide (GaAs)
• Material
Case
Black polyphernylene
sulfide resin (UL94 V-0)
Lead frame
42Alloy
Maximum light emitting
wavelength (nm)
950
Lead frame plating
SnCu plating
I/O Frequency (MHz)
0.3
Sheet No.: D3-A01001EN
7