ID242 Datasheet, PDF (20/33 Pages) Sharp Electrionic Components – Flash Memory Card

SHARI=
ID242SERIESPRODUCTOVERVIEW
DC Characteristics
T/+KAIVIC
ICK
(Continued)
, BOL , TE , ry
MIN
MAX
, ;I;.,
v k;;
I
I
(Ta = 0 to 60°C:
1 UNIT 1 TEST CONDITION
\ T,,Stmd-by
C :urrent
or Read
\ Ipp Deep Power-Down
C :urrent
6
4MB 1
8MB
1OMB
16MB
20MB 1
I 0.8 I
1.6
2.0
1.6
I 2.0 I
6
vrrs vcc
1.6
2.0
1.6
I 2.0
mA
VPF>VCC
mA
mA
UA
---UI A
\ ’ Word Write or Set
L Zk-Bit Current
6.9
vrr=5.0v*
10%
\ I,,,, Block Erase or
Cblear Lock-Bit
Current
v I,+, Word Write or
B lock Erase Suspend
C ‘urren t
6.9
2MB
4MB
8MB
1OMB
16MB
20MB 1
6
2MB I
4MB 1
8MB 1
1OMB
16MB
40
32
400
430
500
530
500
I 530 I
I 0.4 I
I 0.8 I
I 1.6 I
2.0
1.6
40
mA IVrr=5.0Vt
10%
32
mA I Vrr=l2.OVf
5%
400
UA
430 _--U-IA
500
UA _{VW5 vcc}
530
bA
500 _{4 UA}
I ⁵³⁰
uA I
I 0.4
1 0.8
I ^1.6
2.0
VPP>VCC
1.6
V Ipp Lockout Voltage
NOTE:
20MB
VrTLK 7,9
I
2.0
1 1.5 1
2.0
1 1.5 1 v 1
71048-01
1. These parameters
are applied
to all input pins and all i/put/output
pins in input mode.
2. These parameters
are applied
to An-AZ5 and Do-D,, in input mode.
3. These parameters
are applied to CE,#.CEz#,WE#,OE#,REG#
and RESET.
4. These parameters
are applied
to RDY/BSY#.
5. These parameters
are applied
to Do-D,,
in output mode.
6. All currents
are in RMS unless otherwise
notes.
7. Block erase, word/byte
write, and lock-bit
the VPP Voltage
is VPI’I, VFPZ or VFI.I.
configurations
are inhibited
when V,,, 5 VFPLK, and guaranteed
in
8. Automatic
operation.
Power Savings(APS)
reduces
typical
I _{CCK to 30mA at Vcc=SV}
and 20mA at Vcc=3.3V
in static
9. Sampled.
CPSOOO2.002@ May. 1998