THBTGFR5210-CE Datasheet, PDF (5/15 Pages) Seoul Semiconductor – Surface-mounted chip LED device

♦ Zener Diode의 전기적 특성
항목
ì¡°ê±´
Min
Typ
Max
Unit
V_F
I_F=10㎃
-
I_R
V_R=5V
-
-
1.6
V
-
1.0
㎂
*2 The luminous intensity IV is measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the
LED package.
*3 θ_1/2 is the off-axis where the luminous intensity is 1/2 the peak intensity.
[Note] All products confirm to the listed minimum and maximum specifications for electric and optical characteristics, when operated at
20mA within the maximum ratings shown above. All measurements were made under the standardized environment of SSC.
(Tolerance : I_v ±10 %, λ_D ±2 nm, V_F ±0.1 V)
Rev. 00
September 2008
www.ZLED.com
Document No. : SSC-QP-7-07-24 (Rev.00)