THBTGFR5210-CE Datasheet, PDF (4/15 Pages) Seoul Semiconductor – Surface-mounted chip LED device

1. Absolute maximum ratings
Parameter
Symbol
Power Dissipation
P_d
Forward Current
I_F
Peak Forward Current
I_FM ^*1
Reverse Voltage
V_R
Operation Temperature
T_opr.
Storage Temperature
T_stg.
*1 I_FM conditions: Pulse width Tw≤0.1ms and Duty ratio≤1/10.
*2 1-chip ON
*3 3-chip ON
Red
60
100
Value
Green
90
25^*2/15^*3
100
5
-40 ~ 100
-40 ~ 100
Blue
90
100
(Ta=25℃)
Unit
mW
mA
mA
V
℃
℃
2. Electro-Optical Characteristics
(Ta=25℃)
Parameter
color
Symbol Condition Min
Typ
Max
Unit
Red
I_F=10㎃
1.8
1.9
2.3
Green
V_F
I_F=10㎃
2.7
3.0
3.5
Forward Voltage
Blue
Red
I_F=10㎃
2.7
2.9
3.3
V
I_F=1㎂
1.3
-
1.8
Green
VFm
I_F=1㎂
1.8
-
2.7
Blue
I_F=1㎂
1.8
-
2.7
Reverse Current
Red
I_R
V_R=5V
-
-
10
㎂
Red
I_F=10㎃
120
170
200
Luminous Intensity^*2
Green
I_V
I_F=10㎃
230
300
380
mcd
Blue
I_F=10㎃
50
80
140
Red
I_F=10㎃
615
625
635
Wavelength
Green
λd
I_F=10㎃
520
530
540
nm
Blue
I_F=10㎃
465
472
477
Red
I_F=10㎃
-
20
-
Spectral Bandwidth
Green
Δλ
I_F=10㎃
-
35
-
nm
Blue
I_F=10㎃
-
25
-
Viewing Angle^*3
R,G,B
2θ_1/2
I_F=10 ㎃
-
150
-
˚
Rev. 00
September 2008
www.ZLED.com
Document No. : SSC-QP-7-07-24 (Rev.00)