SAW8KG0B Datasheet, PDF (4/31 Pages) Seoul Semiconductor – Superior high Flux for High Voltage System

Performance Characteristics
Table 3. Characteristics, I_F=20mA, T_j = 25ºC, RH30%
Parameter
Forward Current
Forward Voltage*
Reverse Voltage
Luminous Intensity*^[1]
(3700~7000K)
Luminous Intensity*^[1]
(2600~3700K)
Color Rendering Index*
Viewing Angle ^[2]
Power Dissipation **^[4]
Junction Temperature
Operating Temperature
Storage Temperature
Thermal resistance ^[3]
ESD Sensitivity(HBM)
Symbol
I_F
I_F
V_R (I_R=10mA)
I_v
I_v
Ra
2Θ_1/2
P_d
T_j
T_opr
T_stg
Rθ_J-S
-
Min.
-
20.7
0.7
-
-
80
-
-
-
- 40
- 40
-
5
Product Data Sheet
MJT 5630-Acrich MJT
Value
Typ.
20
22
-
19.0
(58.0)
17.5
(52.5)
82
115
-
-
-
-
27
-
Max.
25
23
-
-
-
90
-
0.58
125
+ 85
+ 100
-
-
Unit
mA
V
V
cd
(lm)
-
deg.
W
ºC
ºC
ºC
K/W
KV
Notes :
(1) The luminous intensity IV was measured at the peak of the spatial pattern which may not be
aligned with the mechanical axis of the LED package.
(2) 2Θ_1/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity.
(3) Thermal resistance: RthJS (Junction / solder)
* Tolerance : VF :±0.4V, IV :±7%, Ra :±2, x,y :±0.007
(4) Care is to be taken that power dissipation does not exceed the absolute maximum rating of the
product.
** LED’s properties might be different from suggested values like above and below tables if operation
condition will be exceeded our parameter range.
Rev7.0
4
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