SAW8KG0B Datasheet, PDF (3/31 Pages) Seoul Semiconductor – Superior high Flux for High Voltage System

Performance Characteristics
Product Data Sheet
MJT 5630-Acrich MJT
Table 2. Electro Optical Characteristics, I_F=20mA, T_j = 25ºC, RH30%
Luminous Intensity ^[2]
Luminous Flux ^[3]
CRI
CCT (K) ^[1]
Part Number
RANK
IV (cd)
ФV (lm)
Ra
Typ.
Min
Max
Min
Max
Min.
X8
14.8
16.1
45.9
49.9
80
Y1
16.1
17.4
49.9
53.9
80
7000~4700
Z4
17.4
19.0
53.9
58.9
80
J0
19.0
20.3
58.9
62.9
80
K3
20.3
21.6
62.9
67.0
80
X8
14.8
16.1
45.1
49.1
80
Y1
16.1
17.4
49.1
53.1
80
SAW8KG0B 4700~3700
Z4
17.4
19.0
53.1
58.0
80
J0
19.0
20.3
58.0
61.9
80
K3
20.3
21.6
61.9
65.9
80
W5
13.5
14.8
40.5
44.4
80
X8
14.8
16.1
44.4
48.3
80
3700~2600
Y1
16.1
17.4
48.3
52.2
80
Z4
17.4
19.0
52.2
57.0
80
J0
19.0
20.3
57.0
60.9
80
Notes :
(1) Correlated Color Temperature is derived from the CIE 1931 Chromaticity diagram.
Color coordinate : 0.007
(2) Seoul Semiconductor maintains a tolerance of 7% on Intensity and power measurements.
The luminous intensity IV was measured at the peak of the spatial pattern which may not be
aligned with the mechanical axis of the LED package.
(3) Calculated performance values are for reference only.
Rev7.0
3
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