BC859 Datasheet, PDF (6/6 Pages) NXP Semiconductors – PNP general purpose transistors

BC859
Collector-Base cutoff current
versus ambient temperature
nA
10 ⁴
10 ³
-ICBO 10 ²
10
1
10 ^-1
0
Test voltage -VCBO:
equal to the given
maximum value -VCEO
typical
maximum
100
200 ^oC
Tj
Relative h-parameters
versus collector current
Collector-base capacitance,
Emitter-base capacitance
versus reverse bias voltage
pF
20
Tamb=25 ^o C
18
16
14
CCBO
CEBO ¹²
10
8
6
CCBO
CEBO
4
2
0
0.1 ²
5₁
2
5 _10V
-VCBO,-VEBO
Noise figure
versus collector current
10²
6
4
2
he(-I C) ¹⁰
h ie
he(-IC=2mA) 6
4
2
h re
1
6
h fe
4
2
h oe
10 ^-1
10 ^-1 2
4
-VCE=5V
Tamb=25^o C
1 2 4 10mA
-IC
dB
20
-VCE=5V
18
f=120Hz
Tamb=25^o C
16
RG=1M
100K 10K 1K
F
14
500
12
10
8
6
4
2
0
10 ^-3 10 ^-2
10^-1
1 10 mA
-IC
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005