English
Language : 

BC859 Datasheet, PDF (5/6 Pages) NXP Semiconductors – PNP general purpose transistors
BC859
Collector saturation voltage
versus collector current
DC current gain
versus collector current
V
0.5
-I C/-I B =20
0.4
-VCEsat 0.3
0.2
o
Tamb=100 C
25 oC
0.1
0
10 -1 2
-50 oC
5 12
5 10 2
5 102 mA
-IC
103
5
4
3
-VCE=5V
100o C
2
102
h FE
5
4
3
o
Tamb=25
C
-50o C
2
10
5
4
3
2
1
10 -2 10-1 1
10
10 2mA
-IC
Noise figure
versus collector current
Noise figure
versus collector emitter voltage
dB
20
-VCE=5V
18
f=1KHz
Tamb=25o C
16
100K
F 14 500
12
RG=1M
10K
10
1K
8
6
500
4
2
0
10 -3 10 -2
10-1
1 10 mA
-IC
dB
20 -IC=0.2mA
RG=2K
18 f=1KHz
Tamb=25o C
16
F 14
12
10
8
6
4
2
0
10 -1 2
5 1 2 5 10 2
5 102 V
-VCE
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005