BC859 Datasheet, PDF (4/6 Pages) NXP Semiconductors – PNP general purpose transistors

BC859
Admissible power dissipation
versus temperature of substrate backside
Collector current
versus base emitter voltage
mW
500
400
Ptot 300
200
100
0
0
mA
10 ²
5
4
3
-VCE=5V
Tamb=25 ^oC
2
10
-IC
5
4
3
2
1
100
200 ^oC
TSB
5
4
3
2
10 ^-1
0
0.5
1V
-VBE
Pulse thermal resistance
versus pulse duration (normalized)
Gain bandwidth product
versus collector current
10
5 ^0.5
4
3
2 ^0.2
10 ^{-1 0.1}
r thSB
RthSB
0.05
5
4
3 _0.02
2
0.01
10 ^-2
5 ^{5 -3}
4
3
2 v=0
tp
v=tp
T
PI
10 ^-3
T
10 ^-7 10 ^-6 10 ^-5 10 ^-4 10 ^-3 10 ^-2 10 ^-1 1s
tp
MHz
10 ³
7
5
4
3
fT
2
10 ²
7
5
4
3
2
Tamb=25 ^o C
-VCE=10V
5V
2V
10
0.1 2 5 1 2
5 10 2 5 100mA
-IC
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Dated : 20/10/2005