BC859 Datasheet, PDF (2/6 Pages) NXP Semiconductors – PNP general purpose transistors

BC859
Characteristics at T_a =25 ^OC
Symbol Min.
Typ.
Max.
Unit
h-Parameters at -V_CE=5V, -I_C=2mA, f=1KHz
Current Gain
Current Gain Group A h_fe
-
220
-
-
B
h_fe
-
330
-
-
C
h_fe
-
600
-
-
Input Impedance
Current Gain Group A h_ie
1.6
2.7
4.5
KΩ
B
h_ie
3.2
4.5
8.5
KΩ
C
h_ie
6.0
8.7
15
KΩ
Output Admittance
Current Gain Group A h_oe
-
18
30
µS
B
h_oe
-
30
60
µS
C
h_oe
-
60
110
µS
Reverse VoltageTransfer Ratio Current Gain Group A h_re
-
1.5 ^. 10^-4
-
-
B
h_re
-
2 ^. 10^-4
-
-
C
h_re
-
3 ^. 10^-4
-
-
DC Current Gain
at -V_CE=5V, -I_C=2mA
Current Gain Group ^{A hFE}
110
-
220
-
B
h_FE
200
-
450
-
C
h_FE
420
-
800
-
Collector–Emitter Saturation Voltage
at -I_C=10mA, -I_B=0.5mA
at -I_C=100mA, -I_B=5mA
Base-Emitter On Voltage
at -I_C=2mA, -V_CE=5V
at -I_C=10mA, -V_CE=5V
-V_CEsat
-
-V_CEsat
-
-
300
mV
-
650
mV
-V_BE(on)
600
-
750
mV
-V_BE(on)
-
-
820
mV
Collector Cutoff Current
at -V_CB=30V
at -V_CB=30V, T_J=150^OC
-I_CBO
-
-I_CBO
-
-
15
nA
-
5
µA
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005