SKM50GB063D Datasheet, PDF (5/6 Pages) Semikron International – SEMITRANS M Superfast NPT-IGBT Modules

1
K/W
M 50GB 06.X LS -19
1
K/W
M 50GB 06.X LS -20
0,1
0,1
D=0,5
0,2
D=0,50
0,1
0,20
0,05
0,10
0,02
0,05
0,01
0,01
0,02
0,01
0,01
single pulse
Z_thJC
single pulse
0,001
0,00001 0,0001
t_p
0,001
0,01
0,1
1
s
Z_thJC
0,001
0,00001 0,0001
t_p
0,001
0,01
0,1
1
s
Fig. 19 Transient thermal impedance of IGBT
Z_thJC = f (t_p); D = t_p / t_c = t_p · f
Fig. 20 Transient thermal impedance of
inverse CAL diodes Z_thJC = f (t_p); D = t_p / t_c = t_p · f
M50GB 06.X LS -22
80
V_CC = 300 V ⁸⁰
A
R_G=
10 Ω
T_j = 125 °C A
V_GE = ± 15 V
60
60
M50GB 06.X LS -23
R_G=
10 Ω
V_CC = 300 V
T_j = 125 °C
V_GE = ± 15 V
I_F = 50 A
15 Ω
15 Ω
40
40
25 Ω
25 Ω
40 Ω
40 Ω
20
80 Ω
20
80 Ω
I_RR
I_RR
0
0
20
40
60
80
100
I_F
A
0
0
di_F/dt
1000
2000
3000
4000
A/µs
Fig. 22 Typ. CAL diode peak reverse recovery
current I_RR = f (I_F; R_G)
Fig. 23 Typ. CAL diode peak reverse recovery
current I_RR = f (di/dt)
6
µC
5
25 Ω ^{15 Ω}
40 Ω
4 ^{80 Ω}
M 50GB 06.X LS -24
R_G=
10 Ω _IF=
75 A
V_CC = 300 V
T_j = 125 °C
V_GE = ± 15 V
50 A
38 A
3
25 A
2
13 A
1
Q_rr
0
0
1000
di_F/dt
2000
3000
4000 5000
A/µs
Fig. 24 Typ. CAL diode recovered charge
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