SKM50GB063D Datasheet, PDF (1/6 Pages) Semikron International – SEMITRANS M Superfast NPT-IGBT Modules

Absolute Maximum Ratings
Symbol Conditions ¹⁾
V_CES
V_CGR
I_C
I_CM
V_GES
P_tot
T_j, (T_stg)
V_isol
humidity
climate
R_GE = 20 kΩ
T_case = 25/75 °C
T_case = 25/75 °C; t_p = 1 ms
per IGBT, T_case = 25 °C
AC, 1 min.
DIN 40040
DIN IEC 68 T.1
Inverse Diode
I_F = –I_C T_case = 25/80 °C
I_FM = –I_CM T_case = 25/80 °C; t_p = 1 ms
I_FSM
t_p = 10 ms; sin.; T_j = 150 °C
I²t
t_p = 10 ms; T_j = 150 °C
Characteristics
Symbol Conditions ¹⁾
V_(BR)CES
V_GE(th)
I_CES
I_GES
V_CEsat
V_CEsat
g_fs
V_GE = 0, I_C = 1,5 mA
V_GE = V_CE, I_C = 1 mA
V_GE = 0
T_j = 25 °C
V_CE = V_CES T_j = 125 °C
V_GE = 20 V, V_CE = 0
I_C = 30 A V_GE = 15 V;
I_C = 50 A T_j = 25 (125) °C
V_CE = 20 V, I_C = 50 A
C_CHC
C_ies
C_oes
C_res
L_CE
per IGBT
V_GE = 0
V_CE = 25 V
f = 1 MHz
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
V_CC = 300 V
V_GE = –15 V / +15 V³⁾
I_C = 50 A, ind. load
R_Gon = R_Goff = 22 Ω
T_j = 125 °C
Inverse Diode ⁸⁾
V_F = V_EC I_F = 50 A V_GE = 0 V;
T_j = 25 (125 °C)
V_TO
T_j = 125 °C
r_t
I_RRM
T_j = 125 °C
I_F = 50 A; T_j = 125 °C²⁾
Q_rr
I_F = 50 A; T_j = 125 °C²⁾
Thermal characteristics
R_thjc
R_thjc
R_thch
per IGBT
per diode
per module
© by SEMIKRON
Values
600
600
70 / 50
140 / 100
± 20
250
–40 ... +150 (125)
2500
Class F
40/125/56
75 / 50
140 / 100
440
970
Units
V
V
A
A
V
W
°C
V
SEMITRANS^® M
Superfast NPT-IGBT
Modules
SKM 50 GB 063 D
A
A
A
SEMITRANS 2
A²s
min.
≥ V_CES
4,5
–
–
–
–
–
20
–
–
–
–
–
–
–
–
–
–
–
typ.
–
5,5
0,1
3
–
1,8(2,0)
2,1(2,4)
–
–
2800
300
200
–
50
40
300
30
2,5
1,8
max.
–
6,5
1,5
–
100
–
2,5(2,8)
–
350
–
–
–
30
–
–
–
–
–
–
Units
V
V
mA
mA
nA
V
V
S
pF
pF
pF
pF
nH
ns
ns
ns
ns
mWs
mWs
– 1,45(1,35) 1,7
V
–
–
0,9
V
–
10
15
mΩ
–
31
–
A
–
3,2
–
µC
–
–
0,5 °C/W
–
–
1,0 °C/W
–
–
0,05 °C/W
0898
GB
Features
• N channel, homogeneous Silicon
structure (NPT- Non punch-
through IGBT)
• Low tail current with low
temperature dependence
• High short circuit capability, self
limiting if term. G is clamped to E
• Pos. temp.-coeff. of V_CEsat
• 50 % less turn off losses ⁹⁾
• 30 % less short circuit current ⁹⁾
• Very low C_ies, C_oes, C_res ⁹⁾
• Latch-up free
• Fast & soft inverse CAL diodes ⁸⁾
• Isolated copper baseplate using
DCB Direct Copper Bonding
Technology without hard mould
• Large clearance (10 mm) and
creepage distances (20 mm)
Typical Applications
• Switching (not for linear use)
• Switched mode power supplies
• UPS
• Three phase inverters for servo /
AC motor speed control
• Pulse frequencies also above
10 kHz
1) _{Tcase = 25 °C, unless otherwise}
specified
2) _{IF = – IC, VR = 300 V,}
–di_F/dt = 800 A/µs, V_GE = 0 V
3) _{Use VGEoff = –5... –15 V}
8) _{CAL = Controlled Axial Lifetime}
Technology
9) _{Compared to PT-IGBT}
Cases and mech. data → B 6 – 12
B6–7