SKM50GB063D Datasheet, PDF (4/6 Pages) Semikron International – SEMITRANS M Superfast NPT-IGBT Modules

SKM 50 GB 063 D
20
V
18
16
14
12
100V
M 50GB06.XLS-13
I_Cpuls = 50 A
300V
10
nF
1
M 50GB06.XLS-14
V_GE = 0 V
f = 1 MHz
C_ies
10
8
6
4
2
V_GE
0
0
40
Q_Gate
80
120 _nC 160
C_oes
C_res
0,1
C
0,01
0
10
20
30
40
V_CE
V
Fig. 13 Typ. gate charge characteristic
Fig. 14 Typ. capacitances vs.V_CE
1000
ns
100
t
M 50GB06.XLS-15
t_{dof f}
T_j = 125 °C
V_CE = 300 V
V_GE = ± 15 V
R_Gon = 22 Ω
R_Goff = 22 Ω
induct. load
1000
ns
100
t_r
t_don
t_f
t
M 50GB06.XLS-16
T_j = 125 °C
t_{doff VCE = 300 V}
V_GE = ± 15 V
I_C = 50 A
induct. load
t_don
t_r
t_f
10
0
20
40
60
80
I_C
Fig. 15 Typ. switching times vs. I_C
100 120
A
10
0
20
40
60
80 100 120
R_G
Ω
Fig. 16 Typ. switching times vs. gate resistor R_G
80
A
T_j=125°C typ.
60
T_j=25°C typ.
T_j=125°C max.
T_j=25°C max.
40
M 50GB06.XLS-17
0,8
mJ
0,6
0,4
M 50GB06.XLS-18
V_CC = 300 V
R_G=
10 Ω
T_j = 125 °C
V_GE = ± 15 V
15 Ω
25 Ω
40 Ω
80 Ω
20
I_F
0
0
0,4
V_F
0,8
1,2
1,6 _V 2
Fig. 17 Typ. CAL diode forward characteristic
B 6 – 10
0,2
E_{of f D}
0
0
20
40
60
80
100
I_F
A
Fig. 18 Diode turn-off energy dissipation per pulse
0898
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