SKM50GB063D Datasheet, PDF (3/6 Pages) Semikron International – SEMITRANS M Superfast NPT-IGBT Modules

80
A
70
60
M50GB 06.X LS -8
T_j = 150 °C
V_GE ≥ 15V
50
40
30
20
10
I_C
0
0 20 40 60 80 100 120 140 160
T_C
°C
Fig. 8 Rated current vs. temperature I_C = f (T_C)
100
A
17V
80
15V
13V
11V
9V
60
7V
40
M50GB 06.X LS -9
100
A
80
17V
15V
13V
11V
60
9V
7V
40
M 50GB 06.X LS -10
20
I_C
0
0 _VCE 1
2
3
4V 5
Fig. 9 Typ. output characteristic, t_p = 250 µs; T_j = 25 °C
20
I_C
0
0
1
2
3
4
5
V_CE
V
Fig. 10 Typ. output characteristic, t_p = 250 µs; T_j = 125 °C
P_cond(t) = V_CEsat(t) · I_C(t)
V_CEsat(t) = V_CE(TO)(Tj) + r_CE(Tj) · I_C(t)
V_CE(TO)(Tj) ≤ 1,2 - 0,001 (T_j –25) [V]
typ.: r_CE(Tj) = 0,018 + 0,00008 (T_j –25) [Ω]
max.: r_CE(Tj) = 0,026 + 0,00008 (T_j –25) [Ω]
valid for V_GE = + 15
+2
–1
[V]; I_C ≥ 0,3 I_Cnom
Fig. 11 Saturation characteristic (IGBT)
Calculation elements and equations
100
A
80
M50GB 06.X LS -12
60
40
20
I_C
0
0
2
4
6
8 10 12 14
V_GE
V
Fig. 12 Typ. transfer characteristic, t_p = 80 µs; V_CE = 20 V
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B6–9