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| HFH18N50S Datasheet, PDF (4/7 Pages) SemiHow Co.,Ltd. – 500V N-Channel MOSFET | |||
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Typical Characteristics (continued)
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs Temperature
Operation in This Area
102
is Limited by R
DS(on)
10 μs
100 μs
1 ms
101
10 ms
100 ms
DC
100
10-1
* Notes :
1. T = 25 oC
C
2. T = 150 oC
J
3. Single Pulse
10-2
100
101
102
103
V , Drain-Source Voltage [V]
DS
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
â Note :
1. V = 10 V
GS
2. I = 9.5 A
D
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Figure 8. On-Resistance Variation
vs Temperature
20
16
12
8
4
0
25
50
75
100
125
150
T , Case Temperature [oC]
C
Figure 10. Maximum Drain Current
vs Case Temperature
100
D =0.5
1 0 -1
1 0 -2
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
1 0 -5
* N o tes :
1. Z (t) = 0.52 oC /W M ax.
θJC
2. D u ty F a ctor, D = t /t
12
3. T - T = P * Z (t)
JM
C
DM
θJC
PDM
sin g le p u lse
t1
t2
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t , S q u a re W a ve P u ls e D u ra tio n [s e c]
1
Figure 11. Transient Thermal Response Curve
â SEMIHOW REV.A0,Nov 2009
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