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HFH18N50S Datasheet, PDF (2/7 Pages) SemiHow Co.,Ltd. – 500V N-Channel MOSFET | |||
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Electrical Characteristics TC=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 ã
VGS = 10 V, ID = 9.5 A
2.0
--
4.0
V
-- 0.220 0.265 â¦
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ã
500
ÎBVDSS Breakdown Voltage Temperature
/ÎTJ Coefficient
ID = 250 ã, Referenced to 25â
--
IDSS Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V
--
VDS = 400 V, TC = 125â
--
IGSSF Gate-Body Leakage Current,
Forward
VGS = 30 V, VDS = 0 V
--
IGSSR Gate-Body Leakage Current,
Reverse
VGS = -30 V, VDS = 0 V
--
--
--
V
0.5
--
V/â
--
1
ã
--
10
ã
-- 100 ã
-- -100 ã
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 2850 3700 ã
--
310 400 ã
--
21
27
ã
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 250 V, ID = 19 A,
RG = 25 â¦
(Note 4,5)
VDS = 400V, ID = 19 A,
VGS = 10 V
(Note 4,5)
--
55 120 ã±
--
165 340 ã±
--
95 200 ã±
--
90 190 ã±
--
52 68 nC
--
12
--
nC
--
16
--
nC
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
--
ISM Pulsed Source-Drain Diode Forward Current
--
VSD Source-Drain Diode Forward Voltage IS = 19 A, VGS = 0 V
--
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 19 A, VGS = 0 V
--
diF/dt = 100 A/μs (Note 4)
--
--
19
A
--
76
--
1.4
V
500 --
ã±
5.4
--
μC
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=4.7mH, IAS=19A, VDD=50V, RG=25Ω, Starting TJ =25°C
3. ISDâ¤19A, di/dtâ¤200A/μs, VDDâ¤BVDSS , Starting TJ =25 °C
4. Pulse Test : Pulse Width ⤠300μs, Duty Cycle ⤠2%
5. Essentially Independent of Operating Temperature
â SEMIHOW REV.A0,Nov 2009
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