HFH18N50S Datasheet, PDF (3/7 Pages) SemiHow Co.,Ltd. – 500V N-Channel MOSFET

Typical Characteristics
V_DS, Drain-Source Voltage[V]
Figure 1. On Region Characteristics
0.7
0.6
V = 10V
GS
0.5
0.4
V = 20V
GS
0.3
0.2
0.1
0
∗ Note : T = 25oC
J
10
20
30
40
50
60
70
I , Drain Current [A]
D
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
5000
4000
3000
2000
1000
C
iss
C
oss
C
rss
C = C + C (C = shorted)
iss
gs
gd ds
C =C +C
oss
ds
gd
C =C
rss
gd
* Note ;
1. V = 0 V
GS
2. f = 1 MHz
0
10^-1
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
V_GS, Gate-Source Voltage[V]
Figure 2. Transfer Characteristics
V_SD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
V = 100V
DS
V = 250V
DS
8
V = 400V
DS
6
4
2
∗ Note : I = 19A
D
0
0
10
20
30
40
50
60
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,Nov 2009