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HFH18N50S Datasheet, PDF (1/7 Pages) SemiHow Co.,Ltd. – 500V N-Channel MOSFET | |||
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Nov 2009
HFH18N50S
500V N-Channel MOSFET
BVDSS = 500 V
RDS(on) typ = 0.220â¦
ID = 19 A
FEATURES
 Originative New Design
 Superior Avalanche Rugged Technology
 Robust Gate Oxide Technology
 Very Low Intrinsic Capacitances
 Excellent Switching Characteristics
 Unrivalled Gate Charge : 52 nC (Typ.)
 Extended Safe Operating Area
 Lower RDS(ON) : 0.220 ⦠(Typ.) @VGS=10V
 100% Avalanche Tested
TO-3P
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25â unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
â Continuous (TC = 25â)
â Continuous (TC = 100â)
â Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
500
19
11.4
76
±30
945
19
23
4.5
PD
TJ, TSTG
TL
Power Dissipation (TC = 25â)
- Derate above 25â
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8â from case for 5 seconds
239
1.92
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/â
â
â
Thermal Resistance Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.24
--
Max.
0.52
--
40
Units
â/W
â SEMIHOW REV.A0,Nov 2009
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