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| HFC1N80 Datasheet, PDF (4/7 Pages) SemiHow Co.,Ltd. – 800V N-Channel MOSFET | |||
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Typical Characteristics (continued)
1.2
1.1
1.0
0.9
â» Notes :
1. VGS = 0 V
2. ID = 250 μ A
0.8
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs Temperature
Operation in This Area
is Limited by R DS(on)
100
100 µs
1 ms
10 ms
10-1
DC
* Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
10-2
100
101
102
103
V , Drain-Source Voltage [V]
DS
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
* Notes :
1. VGS = 10 V
2. I = 0.5 A
D
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
0.6
0.4
0.2
0.0
25
50
75
100
125
150
TC, Case Temperature [oC]
Figure 10. Maximum Drain Current
vs Case Temperature
101
D=0.5
0.2
100 0.1
0.05
* Notes :
1. Z (t) = 0.56 oC/W Max.
θJC
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.02
0.01
10-1
single pulse
PDM
t1
t2
10-5
10-4
10-3
10-2
10-1
100
101
t , Square Wave Pulse Duration [sec]
1
Figure 11. Transient Thermal Response Curve
â SEMIHOW REV.A0,Jan 2007
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