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HFC1N80 Datasheet, PDF (2/7 Pages) SemiHow Co.,Ltd. – 800V N-Channel MOSFET | |||
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Electrical Characteristics TC=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS Gate Threshold Voltage
VDS = VGS, ID = 250 ã
2.5
RDS(ON) Static Drain-Source
On-Resistance
VGS = 10 V, ID = 0.3 A
--
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ã
800
ÎBVDSS Breakdown Voltage Temperature
/ÎTJ Coefficient
ID = 250 ã, Referenced to25â
--
IDSS Zero Gate Voltage Drain Current VDS = 800 V, VGS = 0 V
--
VDS = 640 V, TC = 125â
--
IGSSF Gate-Body Leakage Current,
Forward
VGS = 30 V, VDS = 0 V
--
IGSSR Gate-Body Leakage Current,
Reverse
VGS = -30 V, VDS = 0 V
--
Dynamic Characteristics
Ciss Input Capacitance
--
Coss Output Capacitance
VDS = 25 V, VGS = 0 V,
--
f = 1.0 MHz
Crss Reverse Transfer Capacitance
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 400 V, ID = 1.0 A,
--
RG = 25 â¦
--
--
(Note 4,5)
--
VDS = 640 V, ID = 1.0 A,
--
VGS = 10 V
--
(Note 4,5)
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
--
ISM Pulsed Source-Drain Diode Forward Current
--
VSD Source-Drain Diode Forward Voltage IS = 0.6 A, VGS = 0 V
--
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 1.0 A, VGS = 0 V
--
diF/dt = 100 A/μs (Note 4)
--
Typ Max Units
--
4.5
V
13 16
â¦
--
--
V
1.0
-- V/â
--
1
ã
--
10
ã
-- 100 ã
-- -100 ã
150 195 ã
20
26
ã
5.5 7.2 ã
12
30
ã±
40
90
ã±
25
60
ã±
45 100 ã±
7.5 10.0 nC
1.2
--
nC
4.5
--
nC
-- 0.6
A
-- 2.4
--
1.4
V
310 --
ã±
0.8
--
μC
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=170mH, IAS=1.0A, VDD=50V, RG=25â¦, Starting TJ =25°C
3. ISDâ¤0.6A, di/dtâ¤200A/μs, VDDâ¤BVDSS , Starting TJ =25 °C
4. Pulse Test : Pulse Width ⤠300μs, Duty Cycle ⤠2%
5. Essentially Independent of Operating Temperature
â SEMIHOW REV.A0,Jan 2007
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