HFC1N80 Datasheet, PDF (3/7 Pages) SemiHow Co.,Ltd. – 800V N-Channel MOSFET

Typical Characteristics
V_DS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
40
35
30
V_GS = 10V
25
V_GS = 20V
20
15
※ Note : T_J = 25 ℃
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
I_D , Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
250
C_iss = C_gs + C_gd (C_ds = shorted)
C_iss
C_oss = C_ds + C_gd
C_rss = C_gd
200
150
C_oss
100
※ Note ;
C_rss
1. V_GS = 0 V
2. f = 1 MHz
50
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
V_SD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
V_DS = 160V
V_DS = 400V
8
V_DS = 640V
6
4
2
※ Notes : I_D = 1.0 A
0
0
1
2
3
4
5
6
7
8
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,Jan 2007