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HFC1N80 Datasheet, PDF (1/7 Pages) SemiHow Co.,Ltd. – 800V N-Channel MOSFET | |||
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Jan 2007
HFC1N80
800V N-Channel MOSFET
BVDSS = 800 V
RDS(on) typ = 13 Ω
ID = 0.6 A
FEATURES
ï± Originative New Design
ï± Superior Avalanche Rugged Technology
ï± Robust Gate Oxide Technology
ï± Very Low Intrinsic Capacitances
ï± Excellent Switching Characteristics
ï± Unrivalled Gate Charge : 7.5 nC (Typ.)
ï± Extended Safe Operating Area
ï± Lower RDS(ON) : 13 Ω (Typ.) @VGS=10V
ï± 100% Avalanche Tested
TO-126
1
23
1.Gate 2. Drain 3. Source
D
G
S
Absolute Maximum Ratings TC=25â unless otherwise specified
Symbol
Parameter
Value
VDSS
Drain-Source Voltage
800
ID
Drain Current
â Continuous (TC = 25â)
0.6
Drain Current
â Continuous (TC = 100â)
0.37
IDM
Drain Current
â Pulsed
(Note 1)
2.4
VGS
Gate-Source Voltage
±30
EAS
Single Pulsed Avalanche Energy
(Note 2)
90
IAR
Avalanche Current
(Note 1)
0.6
EAR
Repetitive Avalanche Energy
(Note 1)
1.39
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.0
PD
TJ, TSTG
TL
Power Dissipation (TC = 25â)
- Derate above 25â
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8â from case for 5 seconds
13.9
0.11
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/â
â
â
Thermal Resistance Characteristics
Symbol
RθJC
RθJA
Junction-to-Case
Parameter
Junction-to-Ambient
Typ.
--
--
Max.
9.0
62.5
Units
â/W
â SEMIHOW REV.A0,Jan 2007
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