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| HCD65R600T Datasheet, PDF (4/8 Pages) SemiHow Co.,Ltd. – Extremely low switching loss | |||
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Typical Characteristics (continued)
1.2
1.1
1.0
0.9
0.8
-100
Note :
1. V = 0 V
GS
2. ID = 250PA
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Figure 7. Breakdown Voltage Variation
vs Temperature
102
Operation in This Area
is Limited by R
DS(on)
10 Ps
101
100 Ps
1 ms
10 ms
100
DC
10-1
* Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
10-2
10-1
100
101
102
103
V , Drain-Source Voltage [V]
DS
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Note :
1. VGS = 10 V
2. I = 2.5 A
D
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature [oC]
Figure 10. Maximum Drain Current
vs Case Temperature
100 D=0.5
0.2
0.1
* Notes :
1. ZTJC(t) = 2.2 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZTJC(t)
10-1
0.05
0.02
0.01
PDM
single pulse
t1
10-2
t2
10-5
10-4
10-3
10-2
10-1
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
à°ÍÎͶ;ͺ͹ÎÎÍÎͶÎÍͲͣÍ͵ÎÎÍͣͦ͢͡Í
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