 English |
|
|
|
|
|
|
|
| HCD65R600T Datasheet, PDF (2/8 Pages) SemiHow Co.,Ltd. – Extremely low switching loss | |||
| |||
| ◁ |
Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage
Static Drain-Source
RDS(ON) On-Resistance
VDS = VGS, ID = 250 á³
VGS = 10 V, ID = 2.5 A
2.5
-- 4.5
V
-- 0.54 0.6
Â
Off Characteristics
BVDSS
IDSS
IGSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
VGS = 0 V, ID = 250 á³
VDS = 650 V, VGS = 0 V
VDS = 520 V, TJ = 125à
VGS = Ï30 V, VDS = 0 V
650 --
--
V
--
--
10
á³
--
-- 100 á³
--
-- Ï100 á²
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 50 V, VGS = 0 V,
f = 1.0 MHz
--
590 770 á
--
41
54
á
--
6.5 8.5 á
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 325 V, ID = 7.5 A,
RG = 25 Â
VDS = 520 V, ID = 7.5 A
VGS = 10 V
--
18
46
á¨
--
20
50
á¨
--
60 130 á¨
--
22
54
á¨
-- 14.0 18.5 nC
--
3.2
--
nC
--
4.2
--
nC
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 7.5 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 7.5 A, VGS = 0 V
diF/dt = 100 A/ÈV
--
-- 7.5
A
--
--
22
--
--
1.4
V
-- 300 --
á¨
--
2.4
--
È&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. IAS=3.0A, VDD=50V, RG=25:, Starting TJ =25qC
3. Pulse Test : Pulse Width ÂÈV'XW\&\FOHÂ
à°ÍÎͶ;ͺ͹ÎÎÍÎͶÎÍͲͣÍ͵ÎÎÍͣͦ͢͡Í
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese