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HCD65R600T Datasheet, PDF (1/8 Pages) SemiHow Co.,Ltd. – Extremely low switching loss | |||
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Dec 2015
HCD65R600T / HCU65R600T
650V N-Channel Super Junction MOSFET
Features
 Very Low FOM (RDS(on) X Qg)
 Extremely low switching loss
 Excellent stability and uniformity
 100% Avalanche Tested
Key Parameters
Parameter
BVDSS @Tj,max
ID
RDS(on), max
Qg, Typ
Value
700
7.5
0.6
14
Unit
V
A
È
nC
Application
 Switch Mode Power Supply (SMPS)
 Uninterruptible Power Supply (UPS)
 Power Factor Correction (PFC)
 TV power & LED Lighting Power
Package & Internal Circuit
D-PAK
(HCD65R600T)
D
I-PAK
(HCU65R600T)
G
S
G
D
S
Absolute Maximum Ratings TC=25à
unless otherwise specified
Symbol
Parameter
Value
VDSS
VGS
ID
IDM
EAS
PD
TJ, TSTG
TL
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
Drain Current
â Continuous (TC = 25à
)
â Continuous (TC = 100à
)
â Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Power Dissipation (TA = 25à
) *
Power Dissipation (TC = 25à
)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8â from case for 5 seconds
650
Ï30
7.5
4.7
22
160
2.5
57
-55 to +150
300
Units
V
V
A
A
A
mJ
W
W
à
à
Thermal Resistance Characteristics
Symbol
Parameter
RÈJC
RÈJA
Junction-to-Case
Junction-to-Ambient *
RÈJA
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
2.2
50
110
Units
à
/W
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