HCD65R600T Datasheet, PDF (3/8 Pages) SemiHow Co.,Ltd. – Extremely low switching loss

Typical Characteristics
20
V_GS
Top : 15.0 V
10.0 V
8.0 V
15
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
10
5
* Notes :
1. 300us Pulse Test
2. T_C = 25^oC
0
0
5
10
15
20
25
V_DS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
2.0
1.6
V = 10V
GS
1.2
0.8
V_GS = 20V
0.4
Note : T_J = 25^oC
0.0
0
4
8
12
16
I_D, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
10⁴
C = C + C (C = shorted)
iss gs gd ds
C_oss = C_ds + C_gd
C_rss = C_gd
10³
C_iss
10²
C_oss
10¹
* Note ;
1. V_GS = 0 V
2. f = 1 MHz
10⁰
0.1
1
10
V_DS, Drain-Source Voltage [V]
C_rss
100
Figure 5. Capacitance Characteristics
20
-55^oC
15
25^oC
10
150^oC
5
* Notes :
1. V_DS= 10V
2. 300us Pulse Test
0
2
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10
1
150^oC _25oC
0.1
0.0
* Notes :
1. V_GS= 0V
2. 300us Pulse Test
0.2
0.4
0.6
0.8
1.0
1.2
V_SD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V_DS = 130V
10
V_DS = 325V
V_DS = 520V
8
6
4
2
Note : I_D = 7.5A
0
0
3
6
9
12
15
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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