HRLP150N10K Datasheet, PDF (3/7 Pages) SemiHow Co.,Ltd. – Originative New Design

Typical Characteristics
200
V_GS
Top : 10 V
8V
150
7V
6V
5V
4V
3.5 V
3.0 V
100 Bottom : 2.5 V
50
* Notes :
1. 300us Pulse Test
2. T_C = 25^oC
0
0
2
4
6
8
10
V_DS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
26
24
V = 4.5V
22
GS
V = 10V
20
GS
18
16
14
12
Note : T = 25^oC
J
10
0
40
80
120
160
I_D, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
6000
5000
4000
C_iss = C_gs + C_gd (C_ds = shorted)
C =C +C
oss ds gd
C_rss = C_gd
C_iss
3000
2000
1000
0
10^-1
* Note ;
1. V = 0 V
GS
C_oss
2. f = 1 MHz
C_rss
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
200
T_J=25^oC
150
100
50
* Notes :
1. V_DS= 5V
2. 300us Pulse Test
0
0
1
2
3
4
5
6
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
100
10
175^oC 25^oC
* Notes :
1. V_GS= 0V
2. 300us Pulse Test
1
0.0
0.4
0.8
1.2
1.6
V_SD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
8
6
4
2
V_DS = 80V
I_D = 30V
0
0
15
30
45
60
75
90
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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