HRLP150N10K Datasheet, PDF (2/7 Pages) SemiHow Co.,Ltd. – Originative New Design

Electrical Characteristics T_J=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
V_GS
R_DS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
g_FS Forward Transconductance
Off Characteristics
V_DS = V_GS, I_D = 250 Ꮃ
V_GS = 10 V, I_D = 20 A
V_GS = 4.5 V, I_D = 15 A
V_DS = 5, I_D = 20 A
1.0
-- 2.4
V
--
13
15
mŸ
--
14
20
mŸ
--
50
--
S
BV_DSS
I_DSS
I_GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
V_GS = 0 V, I_D = 250 Ꮃ
V_DS = 80 V, V_GS = 0 V
V_DS = 80 V, T_J = 125୅
V_GS = ρ20 V, V_DS = 0 V
100 --
--
V
--
--
1
Ꮃ
--
-- 100 Ꮃ
--
-- ρ100 Ꮂ
Dynamic Characteristics
C_iss Input Capacitance
C_oss Output Capacitance
C_rss Reverse Transfer Capacitance
V_DS = 25 V, V_GS = 0 V,
f = 1.0 MHz
-- 4000 --
Ꮔ
-- 290 --
Ꮔ
--
150
--
Ꮔ
R_g Gate Resistance
V_GS = 0 V, V_DS = 0 V, f = 1MHz
--
1.2
--
Ÿ
Switching Characteristics
t_d(on) Turn-On Time
t_r Turn-On Rise Time
t_d(off) Turn-Off Delay Time
t_f
Turn-Off Fall Time
Q_g Total Gate Charge
Q_gs Gate-Source Charge
Q_gd Gate-Drain Charge
V_DS = 50 V, I_D = 30 A,
R_G = 6 Ÿ
V_DS = 80 V, I_D = 30 A,
V_GS = 10 V
--
30
--
Ꭸ
--
30
--
Ꭸ
-- 180 --
Ꭸ
--
25
--
Ꭸ
--
80
--
nC
--
10
--
nC
--
15
--
nC
Source-Drain Diode Maximum Ratings and Characteristics
I_S Continuous Source-Drain Diode Forward Current
I_SM Pulsed Source-Drain Diode Forward Current
V_SD Source-Drain Diode Forward Voltage I_S = 30 A, V_GS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
I_S = 30 A, V_GS = 0 V
di_F/dt = 100 A/ȝV
--
--
70
A
--
-- 245
--
--
1.3
V
--
50
--
Ꭸ
--
80
--
nC
Notes :
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=1mH, I_AS=17A, V_DD=25V, R_G=25:, Starting T_J =25qC
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