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HRLP150N10K Datasheet, PDF (1/7 Pages) SemiHow Co.,Ltd. – Originative New Design | |||
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HRLP150N10K
100V N-Channel Trench MOSFET
FEATURES
 Originative New Design
 Superior Avalanche Rugged Technology
 Excellent Switching Characteristics
 Unrivalled Gate Charge : 80 nC (Typ.)
 Extended Safe Operating Area
 Lower RDS(ON) : 13 PÈ (Typ.) @VGS=10V
 Lower RDS(ON) : 14 PÈ (Typ.) @VGS=4.5V
 100% Avalanche Tested
Mar 2016
BVDSS = 100 V
RDS(on) typ = 13 PÈ
ID = 70 A
TO-220
1
23
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25à
unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
EAR
PD
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
â Continuous (TC = 25à
)
â Continuous (TC = 100à
)
â Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TC = 25à
)
- Derate above 25à
100
70
49
245
Ï25
190
13.6
136
0.9
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8â from case for 5 seconds
-55 to +175
300
Units
V
A
A
A
V
mJ
mJ
W
W/à
à
à
Thermal Resistance Characteristics
Symbol
RÈJC
RÈCS
RÈJA
Parameter
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
1.1
--
62.5
Units
à
/W
à°ÍÎͶ;ͺ͹ÎÎÍÎͶÎÍͲͣÍ;ÎΣÍͣͧ͢͡Í
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